CY7C1412AV18-167BZC Cypress Semiconductor Corp, CY7C1412AV18-167BZC Datasheet - Page 14

• Manufacturer Part Number: CY7C1412AV18-167BZC
• Description: IC SRAM 36MBIT 167MHZ 165TFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1412AV18-167BZC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, QDR II
• Memory Size: 36M (2M x 18)
• Speed: 167MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-TFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: Q2668730

Document #: 38-05615 Rev. *C
TAP Controller Block Diagram
TAP Electrical Characteristics
V
V
V
V
V
V
I
Note:
10. These characteristic pertain to the TAP inputs (TMS, TCK, TDI and TDO). Parallel load levels are specified in the Electrical Characteristics table.
X
TDI
OH1
OH2
OL1
OL2
IH
IL
Parameter
TCK
TMS
Output HIGH Voltage
Output HIGH Voltage
Output LOW Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input and OutputLoad Current
Selection
Circuitry
Description
Over the Operating Range
106
31
Boundary Scan Register
30
.
Identification Register
Instruction Register
TAP Controller
29
.
I
I
I
I
GND ≤ V
OH
OH
OL
OL
.
.
= 2.0 mA
= 100 µA
= −2.0 mA
= −100 µA
Test Conditions
.
.
[15, 18, 10]
I
≤ V
Bypass Register
2
2
2
DD
1
1
1
0
0
0
0
0.65V
Min.
–0.3
1.4
1.6
−5
DD
Selection
Circuitry
CY7C1410AV18
CY7C1425AV18
CY7C1412AV18
CY7C1414AV18
V
0.35V
DD
Max.
0.4
0.2
5
+ 0.3
DD
Page 14 of 25
TDO
Unit
µA
V
V
V
V
V
V
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