SS16 F3 Taiwan Semiconductor, SS16 F3 Datasheet
![no-image](/images/manufacturer_photos/0/6/647/taiwan_semiconductor_sml.jpg)
SS16 F3
Manufacturer Part Number
SS16 F3
Description
Schottky Diodes & Rectifiers 1.0 Amp 60 Volt 30 Amp IFSM
Manufacturer
Taiwan Semiconductor
Datasheet
1.SS14_F3.pdf
(2 pages)
Specifications of SS16 F3
Product Category
Schottky Diodes & Rectifiers
Rohs
yes
Part # Aliases
F3 SS16
Features
Mechanical Data
Maximum Ratings and Electrical Characteristics
Rating at 25
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at T
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
(Note 1)
Maximum DC Reverse Current
Rated DC Blocking Voltage
Maximum DC Reverse Current at VR=33V
&
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance ( Note 2 )
Operating Temperature Range
Storage Temperature Range
Notes:
Type Number
T
A
L
=50
(See Fig. 1)
For surface mounted application
Easy pick and place
Metal to silicon rectifier, majority carrier conduction
Low power loss, high efficiency
High current capability, low VF
High surge current capability
Plastic material used carriers Underwriters
Laboratory Classification 94V-0
Epitaxial construction
High temperature soldering:
260
High reliability grade (AEC Q101 qualified)
Case: JEDEC SMA/DO-214AC Molded plastic
Terminals: Pure tin plated, lead free
Polarity: Indicated by cathode band
Packaging: 12mm tape per EIA STD RS-481
Weight: 0.066 gram
o
C
o
C / 10 seconds at terminals
1. Pulse Test with PW=300 usec, 1% Duty Cycle
2. Measured on P.C.Board with 0.2” x 0.2” (5.0mm x 5.0mm) Copper Pad Areas.
3. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
IF= 1.0A @ 25
o
C ambient temperature unless otherwise specified.
@ 100
@ T
@ T
o
C
o
C
A
A
=125
=25
o
o
1.0 AMP. Surface Mount Schottky Barrier Rectifiers
C
C at
Symbol SS
V
V
R
HT
R
I
V
I
T
FSM
(AV)
RRM
V
RMS
Cj
I
T
STG
DC
ΘJL
θJA
R
F
J
IR
- 32 -
12
20
14
20
-65 to +125
0.5
0.4
SS
13
30
21
30
10
Dimensions in inches and (millimeters)
-
SS
0.4
14
40
28
40
-65 to +150
SMA/DO-214AC
SS
15
50
35
50
0.75
0.65
1.0
5.0
30
50
28
88
SS
16
60
42
60
-65 to +150
SS12 - SS115
SS
19
90
63
90
0.80
0.70
5.0
100 150
100 150
110
0.1
2.0
SS
70
0.95
0.85
115
105
SS
Version: D08
Units
o
C/W
mA
mA
uA
pF
o
o
V
V
V
A
A
V
C
C
Related parts for SS16 F3
SS16 F3 Summary of contents
Page 1
Features For surface mounted application Easy pick and place Metal to silicon rectifier, majority carrier conduction Low power loss, high efficiency High current capability, low VF High surge current capability Plastic material used carriers Underwriters Laboratory Classification 94V-0 Epitaxial construction ...
Page 2
RATINGS AND CHARACTERISTIC CURVES (SS12 THRU SS115) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 1.0 SS12- SS14 0.5 PCB MOUNTED ON 0.2X0.2" (5.0X5.0mm) COPPER PAD AREAS 100 110 120 130 o LEAD TEMPERATURE ...