STP80N70F6 STMicroelectronics, STP80N70F6 Datasheet - Page 6

• Manufacturer Part Number: STP80N70F6
• Description: MOSFET N-Ch 68V 0.0063Ohm 96A STripFET VI
• Manufacturer: STMicroelectronics

Specifications of STP80N70F6

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 68 V
• Continuous Drain Current: 96 A
• Resistance Drain-source Rds (on): 0.008 Ohms
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220
• Fall Time: 23 ns
• Gate Charge Qg: 99 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 110 W
• Rise Time: 29 ns
• Typical Turn-off Delay Time: 102 ns

Electrical characteristics
2.1
6/13
Figure 2.
Figure 4.
Figure 6.
100
0.1
(A)
10
I
D
1
0.1
250
200
300
150
100
V
(V)
(A)
50
I
GS
10
12
D
0
0
8
6
4
2
0
0
Electrical characteristics (curves)
Safe operating area
Output characteristics
Gate charge vs gate-source voltage Figure 7.
20
1
1
40
V
DD
I
D
=96A
60
=34V
2
Tj=175°C
Tc=25°C
Single
pulse
V GS = 10 V
80
10
3
100
V GS = 6 V
V GS = 5 V
V GS = 4 V
V
DS
V
Q
(V)
DS
Doc ID 023433 Rev 1
10ms
g
100µs
1ms
AM15420v1
(nC)
AM15427v1
(V)
AM15423v1
Figure 3.
Figure 5.
10
10
R
10
10
DS(on)
K
200
150
(mΩ)
300
250
100
-2
-3
-1
(A)
50
I
-6
D
0.1
12
0
14
10
δ=0.5
Single pulse
6
4
2
0
8
2
0.2
0
10
Thermal impedance
Transfer characteristics
Static drain-source on-resistance
3
10
-5
V DS = 4 V
0.01
4
10
20
-4
5
V
30
GS
10
0.02
6
=10V
-3
40
10
7
0.05
50
-2
Zth=k Rthj-c
8
60
δ=tp/τ
10
tp
τ
-1
9
70
280TOEG
10
10
STP80N70F6
80
0
t
V
p
I
(s)
GS
D
(A)
AM15422v1
(V)
AM15429v1