STP80N70F6 STMicroelectronics, STP80N70F6 Datasheet - Page 8

• Manufacturer Part Number: STP80N70F6
• Description: MOSFET N-Ch 68V 0.0063Ohm 96A STripFET VI
• Manufacturer: STMicroelectronics

Specifications of STP80N70F6

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 68 V
• Continuous Drain Current: 96 A
• Resistance Drain-source Rds (on): 0.008 Ohms
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220
• Fall Time: 23 ns
• Gate Charge Qg: 99 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 110 W
• Rise Time: 29 ns
• Typical Turn-off Delay Time: 102 ns

Test circuits
3
8/13
Figure 13. Switching times test circuit for
Figure 15. Test circuit for inductive load
Figure 17. Unclamped inductive waveform
25 Ω
P
V
W
DD
G
V
D
S
GS
D.U.T.
A
B
Test circuits
resistive load
switching and diode recovery times
I
D
V
R
D
G
R
G
FAST
DIODE
B
A
I
DM
V
G
A
B
D
R
D.U.T.
L
S
D
L=100μH
V
2200
μF
(BR)DSS
3.3
μF
3.3
μF
Doc ID 023433 Rev 1
1000
μF
AM01468v1
AM01472v1
AM01470v1
V
DD
V
DD
V
DD
Figure 14. Gate charge test circuit
Figure 16. Unclamped inductive load test
Figure 18. Switching time waveform
V
P
i
V
W
0
0
i
=20V=V
P
w
10%
2200
μF
1kΩ
GMAX
td
circuit
on
I
90%
V
t
D
on
D
I
G
2.7kΩ
12V
t
=CONST
r
47kΩ
10%
V
GS
L
D.U.T.
V
47kΩ
100Ω
DS
2200
μF
100nF
90%
td
off
t
off
STP80N70F6
3.3
μF
D.U.T.
t
f
10%
AM01473v1
AM01469v1
AM01471v1
1kΩ
90%
V
V
V
G
DD
DD