STP80N70F6 STMicroelectronics, STP80N70F6 Datasheet - Page 7

• Manufacturer Part Number: STP80N70F6
• Description: MOSFET N-Ch 68V 0.0063Ohm 96A STripFET VI
• Manufacturer: STMicroelectronics

Specifications of STP80N70F6

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 68 V
• Continuous Drain Current: 96 A
• Resistance Drain-source Rds (on): 0.008 Ohms
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220
• Fall Time: 23 ns
• Gate Charge Qg: 99 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 110 W
• Rise Time: 29 ns
• Typical Turn-off Delay Time: 102 ns

STP80N70F6
Figure 8.
Figure 10. Normalized gate threshold voltage
Figure 12. Source-drain diode forward
(norm)
V
5000
7000
6000
3000
2000
1000
GS(th)
4000
(pF)
(V)
0.8
0.6
0.4
0.2
V
1.2
0.4
0.9
0.8
0.7
0.6
0.5
C
SD
-75
0
0
1
1
0
0
-50
Capacitance variations
vs temperature
characteristics
10
-25
20
20
0 25
30
40 50 60 70 80
T
50
J
=25°C
40
I
D
75 100
=250 µA
T
J
=-50°C
T
125 150
J
60
=150°C
V
I
T
Doc ID 023433 Rev 1
SD
DS
J
AM15426v1
AM15425v1
AM15421v1
(°C)
(A)
(V)
Coss
Crss
Ciss
Figure 9.
Figure 11. Normalized on-resistance vs
R
DS(on)
1.05
0.95
0.85
(norm)
(norm)
V
0.9
0.8
1.1
0.5
1.5
DS
-75
1
0
-75
2
1
-50
Normalized B
temperature
-50
-25
-25
V
GS
=10V
0 25
0 25
I
D
= 1mA
Electrical characteristics
50
50
VDSS
75
75 100 125 150
100 125150
vs temperature
T
J
(°C)
I
AM15428v1
AM15424v1
D
(A)
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