IXXN110N65B4H1 Ixys, IXXN110N65B4H1 Datasheet - Page 5

no-image

IXXN110N65B4H1

Manufacturer Part Number
IXXN110N65B4H1
Description
IGBT Transistors 650V/240A TRENCH IGBT GENX4 XPT
Manufacturer
Ixys
Datasheet

Specifications of IXXN110N65B4H1

Rohs
yes
Configuration
Single
Collector- Emitter Voltage Vceo Max
650 V
Collector-emitter Saturation Voltage
2.1 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current At 25 C
215 A
Gate-emitter Leakage Current
100 nA
Power Dissipation
750 W
Maximum Operating Temperature
'+ 150 C
Package / Case
SOT-227
Continuous Collector Current Ic Max
110 A
Minimum Operating Temperature
'- 55 C
Mounting Style
SMD/SMT

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXXN110N65B4H1
Manufacturer:
NSC
Quantity:
201
© 2013 IXYS CORPORATION, All Rights Reserved
170
150
130
110
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
90
70
50
30
10
25
55
2
E
R
V
off
CE
G
= 2
Fig. 16. Inductive Turn-off Switching Times vs.
E
T
V
= 400V
3
60
off
J
CE
Fig. 12. Inductive Switching Energy Loss vs.
Fig. 14. Inductive Switching Energy Loss vs.
Ω ,  
= 150ºC , V
= 400V
4
V
65
GE
50
= 15V
5
E
T
on
70
GE
J
= 25ºC
- - - -
E
T
= 15V
6
Junction Temperature
on
J
- Degrees Centigrade
- - - -
75
Collector Current
Gate Resistance
7
R
75
I
C
G
- Amperes
80
- Ohms
8
85
9
100
R
V
t
f i
CE
10
G
90
= 2
= 400V
Ω 
11
, V
95
GE
12
T
= 15V
125
100
I
I
J
I
t
C
C
= 150ºC
I
d(off)
C
= 110A
C
= 55A
= 110A
13
= 55A
105
- - - -
14
110
150
15
180
170
160
150
140
130
120
110
100
18
16
14
12
10
8
6
4
2
0
10
9
8
7
6
5
4
3
2
1
160
140
120
100
200
180
160
140
120
100
4.2
3.8
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
80
60
40
20
80
60
40
20
0
55
25
2
T
T
J
J
Fig. 17. Inductive Turn-off Switching Times vs.
Fig. 15. Inductive Turn-off Switching Times vs.
t
R
V
E
R
V
= 150ºC
= 25ºC
3
T
V
60
t
f i
CE
G
off
G
CE
Fig. 13. Inductive Switching Energy Loss vs.
f i
J
CE
= 2
= 2
= 150ºC, V
= 400V
= 400V
I
= 400V
C
4
Ω 
Ω ,   
= 110A
65
, V
50
V
5
GE
GE
GE
70
= 15V
= 15V
t
d(off)
t
E
d(off)
Junction Temperature
= 15V
6
on
T
J
Collector Current
- - - -
- - - -
75
Gate Resistance
- Degrees Centigrade
I
- - - -
I
7
C
C
75
= 110A
IXXN110N65B4H1
- Amperes
R
G
80
8
- Ohms
9
85
I
C
100
10
= 55A
I
90
C
= 55A
11
95
12
125
100
13
105
14
150
15
110
500
450
400
350
300
250
200
150
100
50
0
280
240
200
160
120
80
40
0
10
9
8
7
6
5
4
3
2
1
0

Related parts for IXXN110N65B4H1