IXXN110N65B4H1 Ixys, IXXN110N65B4H1 Datasheet - Page 7

• Manufacturer Part Number: IXXN110N65B4H1
• Description: IGBT Transistors 650V/240A TRENCH IGBT GENX4 XPT
• Manufacturer: Ixys

Specifications of IXXN110N65B4H1

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 2.1 V
• Maximum Gate Emitter Voltage: 30 V
• Continuous Collector Current At 25 C: 215 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 750 W
• Maximum Operating Temperature: '+ 150 C
• Package / Case: SOT-227
• Continuous Collector Current Ic Max: 110 A
• Minimum Operating Temperature: '- 55 C
• Mounting Style: SMD/SMT

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I
[A]
RM
E
I
[A]
[mJ]
F
rec
200
175
150
125
100
140
120
100
75
50
25
80
60
40
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0
1000
0
400
Fig. 23. Typ. Peak Reverse Current I
T
T
V
V
VJ
VJ
R
R
Fig. 25. Typ. Recovery Energy E
= 150ºC
= 300V
= 150ºC
= 300V
0.5
600
Fig. 21. Typ. Forward characteristics
1200
800
1
1400
-di
di
F
V
F
/dt [A/µs]
F
/dt [A/µs]
1000
1.5
T
- [V]
VJ
= 25ºC
1600
1200
2
rec
RM
vs. -di
T
vs. -di
VJ
1800
I
= 150ºC
F
= 200A
1400
2.5
100A
50A
F
/dt
F
/dt
I
F
= 200A
100A
50A
1600
2000
3
Q
[µC]
[ns]
t
RM
rr
0.001
0.01
350
300
250
200
150
100
0.1
20
16
12
50
0.0001
8
4
0
1
1000
1000
Fig. 22. Typ. Reverse Recovery Charge Q
T
V
Fig. 26. Maximum Transient Thermal Impedance
VJ
R
= 150ºC
= 300V
Fig. 24. Typ. Recovery Time t
0.001
1200
1200
Pulse Width - Seconds
IXXN110N65B4H1
1400
1400
0.01
-di
-di
F
F
/ dt [A/µs]
/dt [A/µs]
1600
1600
0.1
rr
vs. -di
IXYS REF: IXX_110N65B4H1(E8) 02-04-13-B
rr
I
vs. -di
F
1800
1800
T
I
F
V
= 200A
VJ
F
1
= 200A
R
/dt
100A
50A
= 300V
100A
= 150ºC
50A
F
/dt
2000
2000
10