IXXH30N65B4 Ixys, IXXH30N65B4 Datasheet - Page 4

• Manufacturer Part Number: IXXH30N65B4
• Description: IGBT Transistors 650V/65A Trench IGBT GenX4 XPT
• Manufacturer: Ixys

Specifications of IXXH30N65B4

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 1.66 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 65 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 230 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-247AD-3
• Continuous Collector Current Ic Max: 30 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
0.01
100
0.1
10
18
16
14
12
10
0.00001
8
6
4
2
0
1
0
0
f
= 1 MHz
5
10
10
20
Fig. 7. Transconductance
Fig. 9. Capacitance
15
0.0001
T
30
J
I
V
C
= - 40ºC
CE
- Amperes
- Volts
20
25ºC
150ºC
40
25
C oes
C res
C ies
50
Fig. 11. Maximum Transient Thermal Impedance
30
60
0.001
35
Pulse Width - Second
70
40
70
60
50
40
30
20
10
16
14
12
10
0
8
6
4
2
0
100
0
T
R
dv / dt < 10V / ns
V
I
I
J
G
C
G
CE
= 150ºC
5
= 15
0.01
= 30A
= 10mA
= 325V
Fig. 10. Reverse-Bias Safe Operating Area
Ω
200
10
15
300
Fig. 8. Gate Charge
20
Q
G
- NanoCoulombs
V
25
CE
400
- Volts
IXXH30N65B4
30
0.1
35
500
40
45
600
50
700
55
1