IXXH30N65B4 Ixys, IXXH30N65B4 Datasheet - Page 6

• Manufacturer Part Number: IXXH30N65B4
• Description: IGBT Transistors 650V/65A Trench IGBT GenX4 XPT
• Manufacturer: Ixys

Specifications of IXXH30N65B4

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 1.66 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 65 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 230 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-247AD-3
• Continuous Collector Current Ic Max: 30 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
280
240
200
160
120
180
160
140
120
100
80
40
80
60
40
20
0
15
25
Fig. 18. Inductive Turn-on Switching Times vs.
Fig. 20. Inductive Turn-on Switching Times vs.
T
V
t
r i
J
CE
= 150ºC, V
20
= 400V
50
25
GE
t
= 15V
Junction Temperature
d(on)
T
J
Gate Resistance
30
- - - -
- Degrees Centigrade
75
I
R
C
I
G
= 30A
C
- Ohms
= 60A
35
I
C
= 60A
100
t
R
V
40
r i
CE
G
= 15
= 400V
Ω
I
C
45
, V
= 30A
GE
125
t
= 15V
d(on)
50
- - - -
55
150
90
80
70
60
50
40
30
20
46
43
40
37
34
31
28
25
22
160
140
120
100
80
60
40
20
0
15
T
J
= 25ºC
t
R
V
Fig. 19. Inductive Turn-on Switching Times vs.
r i
G
CE
T
20
J
= 15
= 150ºC
= 400V
Ω
, V
25
GE
t
d(on)
= 15V
30
- - - -
Collector Current
I
C
35
- Amperes
IXXH30N65B4
40
45
50
IXYS REF: IXX_30N65B4(E4) 11-14-12
55
60
55
50
45
40
35
30
25
20
15