PSMN013-100BS,118 NXP Semiconductors, PSMN013-100BS,118 Datasheet - Page 2

• Manufacturer Part Number: PSMN013-100BS,118
• Description: MOSFET Std N-chanMOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN013-100BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 68 A
• Resistance Drain-source Rds (on): 13.9 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 170 W
• Factory Pack Quantity: 800

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Marking
Table 4.
5. Limiting values
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PSMN013-100BS
Product data sheet
Symbol
Pin
Type number
Type number
Symbol
Avalanche ruggedness
E
1
2
3
mb
PSMN013-100BS
PSMN013-100BS
V
V
DS(AL)S
DS
DGR
Symbol Description
G
D
S
D
Pinning information
Ordering information
Marking codes
Limiting values
Parameter
Parameter
non-repetitive drain-
source avalanche
energy
drain-source voltage
drain-gate voltage
gate
drain
source
mounting base; connected to
drain
[1]
[1]
Package
Name
D2PAK
[1]
Continuous current is limited by package
It is not possible to make connection to pin 2.
Conditions
Description
All information provided in this document is subject to legal disclaimers.
V
V
plastic single-ended surface-mounted package (D2PAK); 3 leads
(one lead cropped)
GS
sup
= 10 V; T
≤ 100 V; unclamped; R
Conditions
T
T
j
j
Simplified outline
≥ 25 °C; T
≤ 175 °C; T
4 October 2012
N-channel 100V 13.9mΩ standard level MOSFET in D2PAK
j(init)
D2PAK (SOT404)
= 25 °C; I
Marking code
PSMN013-100BS
j
≤ 175 °C
1
j
≥ 25 °C; R
mb
2
3
D
GS
= 68 A;
= 50 Ω
GS
= 20 kΩ
Graphic symbol
Min
-
PSMN013-100BS
mbb076
G
Typ
Min
-
-
-
© NXP B.V. 2012. All rights reserved
D
S
Max
Version
Max
127
SOT404
100
100
Unit
Unit
mJ
V
V
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