PSMN013-100BS,118 NXP Semiconductors, PSMN013-100BS,118 Datasheet - Page 4

• Manufacturer Part Number: PSMN013-100BS,118
• Description: MOSFET Std N-chanMOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN013-100BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 68 A
• Resistance Drain-source Rds (on): 13.9 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 170 W
• Factory Pack Quantity: 800

NXP Semiconductors
6. Thermal characteristics
Table 6.
PSMN013-100BS
Product data sheet
Fig. 3.
Symbol
Fig. 4.
R
R
th(j-mb)
th(j-a)
Z
(K/W)
th (j-mb)
(A)
I
10
D
10
10
10
10
10
10
10
1
- 1
-1
-2
-3
-4
2
1
3
1e -6
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
values
1
δ = 0.5
0.2
0.1
0.05
0.02
s ingle s hot
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Limit R
DSon
10
-5
= V
DS
/ I
D
10
-4
Conditions
All information provided in this document is subject to legal disclaimers.
Fig. 4
minimum footprint; mounted on a
printed-circuit board
10
DC
10
4 October 2012
-3
N-channel 100V 13.9mΩ standard level MOSFET in D2PAK
10
-2
10
2
t
1 ms
10 ms
100 ms
100 µs
p
=10 µs
10
-1
Min
-
-
PSMN013-100BS
P
V
1
DS
t
Typ
p
0.5
50
(V)
T
t
© NXP B.V. 2012. All rights reserved
p
(s )
003a a d575
003aae168
δ =
Max
0.9
-
T
t
p
t
10
10
3
Unit
K/W
K/W
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