SI5999EDU-T1-GE3 Vishay/Siliconix, SI5999EDU-T1-GE3 Datasheet - Page 8

• Manufacturer Part Number: SI5999EDU-T1-GE3
• Description: MOSFET 20V 6A DUAL P-CH MOSFET
• Manufacturer: Vishay/Siliconix

Specifications of SI5999EDU-T1-GE3

• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 20 V
• Continuous Drain Current: - 6 A
• Resistance Drain-source Rds (on): 0.047 Ohms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK ChipFET Dual
• Forward Transconductance Gfs (max / Min): 11 S
• Gate Charge Qg: 13.2 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 10.4 W
• Part # Aliases: SI5999EDU-GE3

Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PowerPAK
www.vishay.com
10
Return to Index
(0.009)
(0.014)
0.225
0.350
(0.046)
1.175
Note: This is Flipped Mirror Image
Pin #1 Location is Top Left Corner
Recommended Minimum Pads
Dimensions in mm/(Inches)
(0.012)
(0.012)
0.300
0.300
®
ChipFET
(0.106)
2.700
(0.026)
(0.026)
0.650
0.650
®
(0.014)
0.350
Dual
(0.060)
1.525
Document Number: 69949
(0.012)
0.300
(0.008)
0.200
Revision: 21-Jan-08