PSMN1R8-30BL,118 NXP Semiconductors, PSMN1R8-30BL,118 Datasheet - Page 9

• Manufacturer Part Number: PSMN1R8-30BL,118
• Description: MOSFET Std N-chanMOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN1R8-30BL,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Resistance Drain-source Rds (on): 1.8 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 270 W
• Factory Pack Quantity: 800

NXP Semiconductors
PSMN1R8-30BL
Product data sheet
Fig 13. Normalized drain-source on-state resistance
Fig 15. Gate-source voltage as a function of gate
V
(V)
a
GS
1.5
0.5
10
2
1
0
8
6
4
2
0
−60
factor as a function of junction temperature
charge; typical values
0
50
0
6 V
100
60
24 V
V
120
150
DS
= 15 V
All information provided in this document is subject to legal disclaimers.
Q
003aad398
T
G
j
( ° C)
(nC)
03aa27
200
180
Rev. 1 — 22 March 2012
N-channel 30 V, 1.8 mΩ logic level MOSFET in D2PAK
Fig 14. Gate charge waveform definitions
Fig 16. Input, output and reverse transfer capacitances
(pF)
10
10
10
10
C
5
4
3
2
10
as a function of drain-source voltage; typical
values
V
-1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
1
I
Q
PSMN1R8-30BL
D
GS
Q
GS2
Q
G(tot)
Q
GD
10
© NXP B.V. 2012. All rights reserved.
V
003aaa508
003aad399
DS
(V)
C
C
C
oss
rss
iss
10
2
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