SQM100N04-3M5-GE3 Vishay/Siliconix, SQM100N04-3M5-GE3 Datasheet - Page 4

• Manufacturer Part Number: SQM100N04-3M5-GE3
• Description: MOSFET 40V 100A 157W
• Manufacturer: Vishay/Siliconix

Specifications of SQM100N04-3M5-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Resistance Drain-source Rds (on): 0.003 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-263
• Fall Time: 9 ns
• Forward Transconductance Gfs (max / Min): 201 S
• Gate Charge Qg: 95.5 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 157 W
• Rise Time: 11 ns
• Typical Turn-off Delay Time: 48 ns

TYPICAL CHARACTERISTICS (T
S12-1849-Rev. B, 30-Jul-12
0.010
0.008
0.006
0.004
0.002
2.0
1.7
1.4
1.1
0.8
0.5
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
0
- 50
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
- 25
I
D
= 30 A
2
www.vishay.com
V
0
GS
T
J
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
25
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
4
50
V
GS
75
6
= 10 V
100
54
52
50
48
46
44
42
Drain Source Breakdown vs. Junction Temperature
T
T
- 50
V
A
J
125
J
GS
= 25 °C
= 150 °C
= 25 °C, unless otherwise noted)
8
= 6 V
I
- 25
D
150
= 1 mA
175
0
10
T
J
- Junction Temperature (°C)
25
50
4
75
0.001
100
0.01
- 0.3
- 0.8
- 1.3
- 1.8
100
0.1
10
0.7
0.2
1
- 50
0
125
- 25
www.vishay.com/doc?91000
150
T
Source Drain Diode Forward Voltage
0.2
J
= 150 °C
V
0
175
SD
- Source-to-Drain Voltage (V)
0.4
25
T
Threshold Voltage
J
- Temperature (°C)
50
SQM100N04-3m5
0.6
75
T
J
I
D
= 25 °C
0.8
100
= 250 μA
Vishay Siliconix
Document Number: 67005
125
I
D
1.0
= 5 mA
150
1.2
175