SQM100N04-3M5-GE3 Vishay/Siliconix, SQM100N04-3M5-GE3 Datasheet - Page 8

• Manufacturer Part Number: SQM100N04-3M5-GE3
• Description: MOSFET 40V 100A 157W
• Manufacturer: Vishay/Siliconix

Specifications of SQM100N04-3M5-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Resistance Drain-source Rds (on): 0.003 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-263
• Fall Time: 9 ns
• Forward Transconductance Gfs (max / Min): 201 S
• Gate Charge Qg: 95.5 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 157 W
• Rise Time: 11 ns
• Typical Turn-off Delay Time: 48 ns

AN826
Vishay Siliconix
2
RECOMMENDED MINIMUM PADS FOR D
PAK: 3-Lead
0.420
(10.668)
0.145
(3.683)
0.135
(3.429)
0.200
0.050
(5.080)
(1.257)
Recommended Minimum Pads
Dimensions in Inches/(mm)
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Document Number: 73397
www.vishay.com
1
11-Apr-05