SQD40N06-14L-GE3 Vishay/Siliconix, SQD40N06-14L-GE3 Datasheet - Page 4

• Manufacturer Part Number: SQD40N06-14L-GE3
• Description: MOSFET 55V 40A 75W
• Manufacturer: Vishay/Siliconix

Specifications of SQD40N06-14L-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 40 A
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-252
• Fall Time: 9 ns
• Forward Transconductance Gfs (max / Min): 52 S
• Gate Charge Qg: 34 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 75 W
• Rise Time: 13 ns
• Typical Turn-off Delay Time: 22 ns

TYPICAL CHARACTERISTICS (T
S12-1846-Rev. B, 30-Jul-12
0.10
0.08
0.06
0.04
0.02
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
2.3
2.0
1.7
1.4
1.1
0.8
0.5
0
- 50
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
I
- 25
D
= 20 A
www.vishay.com
2
V
0
T
GS
J
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
25
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
4
50
75
For technical questions, contact:
6
V
100
GS
T
= 10 V
T
Drain Source Breakdown vs. Junction Temperature
J
75
72
69
66
63
60
J
A
125
= 150 °C
- 50
= 25 °C
8
= 25 °C, unless otherwise noted)
150
I
- 25
D
= 10 mA
175
10
0
T
J
- Junction Temperature (°C)
25
50
4
[e-mail]
75
100
0.001
- 0.3
- 0.7
- 1.1
- 1.5
0.01
100
0.5
0.1
0.1
10
125
1
- 50
0
150
www.vishay.com/doc?91000
- 25
Source Drain Diode Forward Voltage
0.2
175
T
J
V
0
SD
= 150 °C
- Source-to-Drain Voltage (V)
0.4
Threshold Voltage
25
T
J
- Temperature (°C)
50
0.6
SQD40N06-14L
75
T
J
0.8
I
100
Vishay Siliconix
= 25 °C
D
Document Number: 67002
= 250 μA
125
I
D
1.0
= 5 mA
150
1.2
175