SQD40N06-14L-GE3 Vishay/Siliconix, SQD40N06-14L-GE3 Datasheet - Page 7

• Manufacturer Part Number: SQD40N06-14L-GE3
• Description: MOSFET 55V 40A 75W
• Manufacturer: Vishay/Siliconix

Specifications of SQD40N06-14L-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 40 A
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-252
• Fall Time: 9 ns
• Forward Transconductance Gfs (max / Min): 52 S
• Gate Charge Qg: 34 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 75 W
• Rise Time: 13 ns
• Typical Turn-off Delay Time: 22 ns

Revision: 22-Apr-13
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
For technical questions, contact:
TO-252AA CASE OUTLINE
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[e-mail]
Notes
• Dimension L3 is for reference only.
• Xi’an, Mingxin, and GEM SH actual photo.
ECN: X13-0073 Rev. N, 22-Apr-13
DWG: 5347
DIM.
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MIN.
2.18
0.64
0.76
4.95
0.46
0.46
5.97
5.21
6.35
4.32
9.40
1.40
0.89
1.14
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MILLIMETERS
2.28 BSC
4.56 BSC
Package Information
MAX.
10.41
0.127
2.38
0.88
1.14
5.46
0.61
0.89
6.22
6.73
1.78
1.27
1.02
1.52
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Vishay Siliconix
Document Number: 71197
0.086
0.025
0.030
0.195
0.018
0.018
0.235
0.205
0.250
0.170
0.370
0.055
0.035
0.045
MIN.
-
-
0.090 BSC
0.180 BSC
INCHES
MAX.
0.045
0.215
0.094
0.005
0.035
0.024
0.035
0.245
0.265
0.410
0.070
0.050
0.040
0.060
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