BSH103 /T3 NXP Semiconductors, BSH103 /T3 Datasheet - Page 2

• Manufacturer Part Number: BSH103 /T3
• Description: MOSFET TAPE13 MOSFET
• Manufacturer: NXP Semiconductors

Specifications of BSH103 /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 0.85 A
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Fall Time: 3.5 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 500 mW
• Rise Time: 3.5 ns
• Factory Pack Quantity: 10000
• Typical Turn-off Delay Time: 20 ns
• Part # Aliases: BSH103,235

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
N-channel enhancement mode MOS transistor in a SOT23
SMD package.
QUICK REFERENCE DATA
1998 Feb 11
V
V
V
V
I
R
P
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
D
Very low threshold
High-speed switching
No secondary breakdown
Direct interface to C-MOS, TTL etc.
Power management
DC to DC converters
Battery powered applications
‘Glue-logic’; interface between logic blocks and/or
periphery
General purpose switch.
DS
SD
GS
GSth
tot
DSon
N-channel enhancement mode
MOS transistor
SYMBOL
drain-source voltage (DC)
source-drain diode forward voltage
gate-source voltage (DC)
gate-source threshold voltage
drain current (DC)
drain-source on-state resistance
total power dissipation
PARAMETERS
CAUTION
V
V
T
V
T
2
s
s
GD
DS
GS
= 80 C
= 80 C
PINNING - SOT23
handbook, halfpage
= V
= 2.5 V; I
= 0; I
CONDITIONS
GS
PIN
Top view
S
1
2
3
; I
= 0.5 A
D
Fig.1 Simplified outline and symbol.
D
= 1 mA
1
= 0.5 A
SYMBOL
3
g
s
d
0.4
MIN.
2
gate
source
drain
MAM273
Product specification
30
1
0.85
0.5
0.5
8
DESCRIPTION
MAX.
g
BSH103
d
s
V
V
V
V
A
W
UNIT