BUK9605-30A /T3 NXP Semiconductors, BUK9605-30A /T3 Datasheet
BUK9605-30A /T3
Manufacturer Part Number
BUK9605-30A /T3
Description
MOSFET TAPE13 PWR-MOS
Manufacturer
NXP Semiconductors
Datasheet
1.BUK9605-30A_T3.pdf
(13 pages)
Specifications of BUK9605-30A /T3
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
75 A
Resistance Drain-source Rds (on)
0.0046 Ohms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
SOT-404
Fall Time
320 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
230 W
Rise Time
220 ns
Factory Pack Quantity
800
Typical Turn-off Delay Time
345 ns
Part # Aliases
BUK9605-30A,118
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
Symbol Parameter
V
I
P
Static characteristics
R
Avalanche ruggedness
E
D
DS
tot
DS(AL)S
DSon
BUK9605-30A
N-channel TrenchMOS logic level FET
Rev. 03 — 19 April 2011
AEC Q101 compliant
Automotive and general purpose
power switching
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
non-repetitive
drain-source avalanche
energy
Quick reference data
Conditions
T
T
V
T
V
T
I
R
T
D
j
mb
j
j
j(init)
GS
GS
GS
≥ 25 °C; T
= 25 °C
= 25 °C
= 75 A; V
= 25 °C
= 5 V; I
= 10 V; I
= 50 Ω; V
= 25 °C; unclamped
D
sup
j
D
≤ 175 °C
= 25 A;
GS
= 25 A;
≤ 25 V;
= 5 V;
Low conduction losses due to low
on-state resistance
Min
-
-
-
-
-
-
Product data sheet
-
Typ
-
-
4.3
3.9
-
Max
30
75
230
5
4.6
500
Unit
V
A
W
mΩ
mΩ
mJ
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