BUK9605-30A NXP Semiconductors, BUK9605-30A Datasheet
BUK9605-30A
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BUK9605-30A Summary of contents
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... BUK9605-30A N-channel TrenchMOS logic level FET Rev. 03 — 19 April 2011 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...
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... °C mb ≤ sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 03 — 19 April 2011 BUK9605-30A N-channel TrenchMOS logic level FET Graphic symbol mbb076 3 Version SOT404 Min Max - ...
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... Fig 2. 003aag053 WDSS (%) t = 100 μ 100 (V) DS Fig 4. All information provided in this document is subject to legal disclaimers. Rev. 03 — 19 April 2011 BUK9605-30A N-channel TrenchMOS logic level FET 100 I D (%) 120 ≥ Normalized continuous drain current as a ...
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... All information provided in this document is subject to legal disclaimers. Rev. 03 — 19 April 2011 BUK9605-30A N-channel TrenchMOS logic level FET Min Typ - - - 50 003aag054 t p δ (s) p Max Unit ...
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... ° /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 03 — 19 April 2011 BUK9605-30A N-channel TrenchMOS logic level FET Min Typ Max 1 ...
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... V (V) DS Fig 7. 003aag057 (V) GS Fig 9. All information provided in this document is subject to legal disclaimers. Rev. 03 — 19 April 2011 BUK9605-30A N-channel TrenchMOS logic level FET 11 DS(on) (mΩ ( 3.0 3.2 7 3.4 3.6 4.0 5 °C j Drain-source on-state resistance as a function of drain current ...
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... I (A) D Fig 11. Normalized drain-source on-state resistance 003aag061 100 200 T (°C) j Fig 13. Sub-threshold drain current as a function of All information provided in this document is subject to legal disclaimers. Rev. 03 — 19 April 2011 BUK9605-30A N-channel TrenchMOS logic level FET 2.0 a 1.5 1.0 0.5 0 -100 0 100 ...
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... Fig 15. Gate-source voltage as a function of gate 100 175 ° 0.2 0.4 0.6 All information provided in this document is subject to legal disclaimers. Rev. 03 — 19 April 2011 BUK9605-30A N-channel TrenchMOS logic level FET °C; I ...
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... max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 03 — 19 April 2011 BUK9605-30A N-channel TrenchMOS logic level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2011. All rights reserved. SOT404 ...
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... Product data sheet Data sheet status Change notice Product data sheet - Product specification - All information provided in this document is subject to legal disclaimers. Rev. 03 — 19 April 2011 BUK9605-30A N-channel TrenchMOS logic level FET Supersedes BUK9605-30A v.2 BUK9605-30A v.1 © NXP B.V. 2011. All rights reserved ...
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... Recommended operating conditions section (if present) or the All information provided in this document is subject to legal disclaimers. Rev. 03 — 19 April 2011 BUK9605-30A N-channel TrenchMOS logic level FET © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 03 — 19 April 2011 BUK9605-30A N-channel TrenchMOS logic level FET Trademarks © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 19 April 2011 Document identifier: BUK9605-30A ...