BUK9605-30A NXP Semiconductors, BUK9605-30A Datasheet - Page 8

• Manufacturer Part Number: BUK9605-30A
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9605-30A
Product data sheet
Fig 14. Input, output and reverse transfer capacitances
Fig 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
(fF)
C
20
15
10
5
0
10
as a function of drain-source voltage; typical
values
V
V
-2
GS
GS
= 0 V; f = 1 MHz
= 0 V
10
-1
1
(A)
I
F
100
80
60
40
20
10
0
C
0
oss
All information provided in this document is subject to legal disclaimers.
V
003aag063
DS
C
C
(V)
iss
rss
0.2
10
Rev. 03 — 19 April 2011
2
0.4
T
j
= 175 °C
Fig 15. Gate-source voltage as a function of gate
0.6
V
(V)
GS
5
4
3
2
1
0
charge; typical values
T
0
T
0.8
j
j
= 25 °C; I
003aag065
= 25 °C
V
SDS
N-channel TrenchMOS logic level FET
(V)
1.0
D
40
= 50 A
V
DS
BUK9605-30A
= 14 V
80
V
Q
DS
© NXP B.V. 2011. All rights reserved.
G
003aag064
= 24 V
(nC)
120
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