BUK9605-30A NXP Semiconductors, BUK9605-30A Datasheet - Page 6

• Manufacturer Part Number: BUK9605-30A
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9605-30A
Product data sheet
Fig 6.
Fig 8.
R
(mΩ)
DS(on)
(A)
I
D
400
300
200
100
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
0
function of drain-source voltage; typical values
of gate-source voltage; typical values
T
Output characteristics: drain current as a
T
Drain-source on-state resistance as a function
0
3
10.0
j
j
7.0
6.0
= 25 °C
= 25 °C; I
4
2
5.0
4.8
4.6
5
D
V
= 25 A
GS
4
(V) = 4.4
6
7
6
8
4.0
3.8
3.4
3.0
2.6
4.2
All information provided in this document is subject to legal disclaimers.
8
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V
9
DS
V
3.6
3.2
2.8
2.4
GS
(V)
(V)
10
10
Rev. 03 — 19 April 2011
Fig 7.
Fig 9.
R
(A)
(mΩ)
I
DS(on)
D
100
80
60
40
20
11
9
7
5
3
0
of drain current; typical values
function of gate-source voltage; typical values
T
Drain-source on-state resistance as a function
V
Transfer characteristics: drain current as a
0
0
j
DS
= 25 °C
V
3.0
3.2
3.4
3.6
4.0
5.0
> I
GS
0.5
N-channel TrenchMOS logic level FET
D
(V) =
20
x R
1.0
DSon
T
40
j
1.5
= 175 °C
BUK9605-30A
2.0
60
T
2.5
j
= 25 °C
© NXP B.V. 2011. All rights reserved.
80
003aag056
003aag058
3.0
I
V
D
GS
(A)
(V)
100
3.5
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