BUK9Y30-75B T/R NXP Semiconductors, BUK9Y30-75B T/R Datasheet - Page 3

• Manufacturer Part Number: BUK9Y30-75B T/R
• Description: MOSFET TRENCH 31V-99V G3
• Manufacturer: NXP Semiconductors

Specifications of BUK9Y30-75B T/R

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 34 A
• Resistance Drain-source Rds (on): 0.028 Ohms
• Configuration: Single Triple Source
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-669
• Fall Time: 83 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 85 W
• Rise Time: 106 ns
• Factory Pack Quantity: 1500
• Typical Turn-off Delay Time: 51 ns
• Part # Aliases: BUK9Y30-75B,115

NXP Semiconductors
BUK9Y30-75B_4
Product data sheet
Fig 1. Normalized continuous drain current as a
Fig 3. Single-shot and repetitive avalanche rating; avalanche current as a function of avalanche period
(A)
40
30
20
10
I
D
0
V
function of mounting base temperature
(1) Single pulse;T
(2) Single pulse;T
(3) Repetitive.
GS
0
5V
50
j
j
= 25 °C.
= 150 °C.
100
10
10
I
(A)
10
AV
150
-1
2
1
10
-3
T
mb
03no16
(°C)
200
10
Rev. 04 — 10 April 2008
-2
10
-1
Fig 2. Normalized total power dissipation as a
(1)
(2)
(3)
P
(%)
der
120
80
40
0
1
P
function of mounting base temperature
0
der
t
AV
03np81
(ms)
=
P
N-channel TrenchMOS logic level FET
tot ( 25°C )
10
P
50
tot
× 100 %
BUK9Y30-75B
100
150
© NXP B.V. 2008. All rights reserved.
T
mb
03na19
(°C)
200
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