OM7628/BGA7027/9/5,598 NXP Semiconductors, OM7628/BGA7027/9/5,598 Datasheet - Page 14

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OM7628/BGA7027/9/5,598

Manufacturer Part Number
OM7628/BGA7027/9/5,598
Description
Amplifier IC Development Tools Medium Power Amp
Manufacturer
NXP Semiconductors
Datasheet

Specifications of OM7628/BGA7027/9/5,598

Product
Evaluation Board
Tool Is For Evaluation Of
BGA7027
Operating Supply Voltage
5.7 V
Operating Supply Current
190 mA
NXP Semiconductors
BGA7027
Product data sheet
Fig 22. Adjacent channel power ratio as a function of
ACPR
(dBc)
(1) f = 2110 MHz; ACPR measured at f  5 MHz
(2) f = 2170 MHz; ACPR measured at f  5 MHz
(3) f = 2110 MHz; ACPR measured at f  10 MHz
(4) f = 2170 MHz; ACPR measured at f  10 MHz
−20
−40
−60
−80
0
0
2-carrier W-CDMA; each carrier according to 3GPP test
model 1; 64 DPCH; PAR for composite signal = 7.5 dB;
5 MHz carrier spacing.
average output power
5
10
Fig 24. Output third-order intercept point as a function of output power per tone
(1) Upper sideband
(2) Lower sideband
(1)
(2)
(3)
(4)
15
f = 2140 MHz; tone spacing = 1 MHz.
P
20
All information provided in this document is subject to legal disclaimers.
L(AV)
001aan076
(dBm)
(dBm)
IP3
Rev. 2 — 26 November 2010
25
O
55
50
45
40
35
30
10
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
Fig 23. Adjacent channel power ratio as a function of
12
ACPR
(dBc)
(1) f = 2110 MHz; ACPR measured at f  5 MHz
(2) f = 2170 MHz; ACPR measured at f  5 MHz
(3) f = 2110 MHz; ACPR measured at f  10 MHz
(4) f = 2170 MHz; ACPR measured at f  10 MHz
−20
−40
−60
−80
0
(1)
(2)
0
2-carrier W-CDMA; each carrier according to 3GPP test
model 1; 64 DPCH; PAR for composite signal = 9 dB;
10 MHz carrier spacing.
average output power
14
5
(1)
(2)
(3)
(4)
P
16
L
(dBm) per tone
001aan078
10
18
15
BGA7027
© NXP B.V. 2010. All rights reserved.
P
20
L(AV)
001aan077
(dBm)
25
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