AT28LV010-20TU Atmel, AT28LV010-20TU Datasheet - Page 5

IC EEPROM 1MBIT 200NS 32TSOP

AT28LV010-20TU

Manufacturer Part Number
AT28LV010-20TU
Description
IC EEPROM 1MBIT 200NS 32TSOP
Manufacturer
Atmel
Datasheets

Specifications of AT28LV010-20TU

Format - Memory
EEPROMs - Parallel
Memory Type
EEPROM
Memory Size
1M (128K x 8)
Speed
200ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
32-TSOP
Capacitance, Input
4 pF
Capacitance, Output
8 pF
Current, Input, Leakage
1 μA
Current, Operating
15 mA
Current, Output, Leakage
1
Data Retention
10 yrs.
Density
1M
Organization
128K×8
Package Type
TSOP
Power Dissipation
54 mW
Temperature, Operating
-40 to +85 °C
Time, Access
200 ns
Time, Address Hold
100
Voltage, Input, High
2 V
Voltage, Input, Low
0.8 V
Voltage, Output, High
2.4 V
Voltage, Output, Low
0.45 V
Voltage, Supply
3.3 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AT28LV010-20TU
Manufacturer:
ATMEL
Quantity:
5 510
Part Number:
AT28LV010-20TU
Manufacturer:
AVER
Quantity:
5 510
Part Number:
AT28LV010-20TU
Manufacturer:
ATMEL/爱特梅尔
Quantity:
20 000
5. DC and AC Operating Range
6. Operating Modes
Notes:
7. Absolute Maximum Ratings*
8. DC Characteristics
0395F–PEEPR–08/09
Operating
Temperature (Case)
V
Mode
Read
Write
Standby/Write Inhibit
Write Inhibit
Write Inhibit
Output Disable
Temperature Under Bias................................ -55°C to +125°C
Storage Temperature ..................................... -65°C to +150°C
All Input Voltages (including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to V
Voltage on OE and A9
with Respect to Ground ...................................-0.6V to +13.5V
Symbol
I
I
I
I
V
V
V
V
LI
LO
SB
CC
CC
IL
IH
OL
OH
Power Supply
(2)
1. X can be V
2. Refer to AC Programming Waveforms.
Parameter
Input Load Current
Output Leakage Current
V
V
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
CC
CC
Active Current
Standby Current CMOS
IL
or V
Ind.
IH
.
Condition
V
V
CE = V
f = 5 MHz; I
I
I
OL
OH
IN
I/O
= 1.6 mA; V
= -100 μA; V
= 0V to V
= 0V to V
CC
CC
CE
V
V
V
X
X
X
IH
+ 0.6V
- 0.3V to V
IL
IL
AT28LV010-20
-40°C - 85°C
OUT
3.3V ± 5%
CC
CC
CC
= 0 mA; V
CC
= 3.0V
= 3.0V
CC
+ 1V
*NOTICE:
CC
= 3.6V
OE
V
V
V
X
V
X
IH
IH
IL
(1)
IL
Ind.
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent dam-
age to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reliability
Min
2.0
2.4
WE
V
V
V
X
X
X
IH
IL
IH
AT28LV010-25
-40°C - 85°C
3.3V ± 10%
Max
0.45
0.8
AT28LV010
50
15
1
1
High Z
High Z
D
D
I/O
OUT
IN
Units
mA
µA
µA
µA
V
V
V
V
5

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