BUK9237-55A /T3 NXP Semiconductors, BUK9237-55A /T3 Datasheet - Page 6

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BUK9237-55A /T3

Manufacturer Part Number
BUK9237-55A /T3
Description
MOSFET TAPE13 PWR-MOS
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BUK9237-55A /T3

Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
32 A
Resistance Drain-source Rds (on)
0.033 Ohms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
SOT-428
Fall Time
73 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
77 W
Rise Time
36 ns
Factory Pack Quantity
2500
Typical Turn-off Delay Time
95 ns
Part # Aliases
BUK9237-55A,118
NXP Semiconductors
BUK9237-55A
Product data sheet
Fig 5.
Fig 7.
(A)
(A)
I
10
I
10
10
10
10
10
D
D
100
80
60
40
20
-1
-2
-3
-4
-5
-6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
2
8
10
1
min
4
typ
6
2
V
GS
max
= 6 V
V
All information provided in this document is subject to legal disclaimers.
8
GS
03aa36
V
DS
(V)
03na96
2.2
4
3
5
(V)
Rev. 3 — 9 November 2010
10
3
Fig 6.
Fig 8.
(A)
g
(S)
I
S
fs
100
80
60
40
20
25
20
15
10
0
5
0
diode voltage; typical values
drain current; typical values
Reverse diode current as a function of reverse
Forward transconductance as a function of
0
0
N-channel TrenchMOS logic level FET
0.2
10
T
j
= 175 °C
0.4
BUK9237-55A
20
0.6
30
© NXP B.V. 2010. All rights reserved.
0.8
T
j
I
= 25 °C
V
D
SD
(A)
03ne94
03na95
(V)
1.0
40
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