BUK9237-55A /T3 NXP Semiconductors, BUK9237-55A /T3 Datasheet - Page 7

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BUK9237-55A /T3

Manufacturer Part Number
BUK9237-55A /T3
Description
MOSFET TAPE13 PWR-MOS
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BUK9237-55A /T3

Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
32 A
Resistance Drain-source Rds (on)
0.033 Ohms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
SOT-428
Fall Time
73 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
77 W
Rise Time
36 ns
Factory Pack Quantity
2500
Typical Turn-off Delay Time
95 ns
Part # Aliases
BUK9237-55A,118
NXP Semiconductors
BUK9237-55A
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
R
(mΩ)
DSon
(A)
I
D
40
30
20
10
70
60
50
40
30
20
0
function of gate-source voltage; typical values
of drain current; typical values
Transfer characteristics: drain current as a
0
0
V
GS
= 3 V
20
1
T
j
= 175 °C
3.2 3.4
40
2
3.6 3.8
T
j
= 25 °C
4
60
3
All information provided in this document is subject to legal disclaimers.
V
I
GS
D
(A)
03na91
03na97
(V)
10
5
Rev. 3 — 9 November 2010
80
4
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
2.5
1.5
0.5
1.5
0.5
a
2
1
0
2
1
0
-60
-60
junction temperature
factor as a function of junction temperature
N-channel TrenchMOS logic level FET
0
0
BUK9237-55A
60
60
max
typ
min
120
120
© NXP B.V. 2010. All rights reserved.
T
03aa33
T
j
j
( ° C)
03ne89
( ° C)
180
180
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