SIA912DJ-T1-E3 Vishay/Siliconix, SIA912DJ-T1-E3 Datasheet
SIA912DJ-T1-E3
Specifications of SIA912DJ-T1-E3
Related parts for SIA912DJ-T1-E3
SIA912DJ-T1-E3 Summary of contents
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... 2. Ordering Information: SiA912DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
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... SiA912DJ Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...
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... New Product thru 2 1 1.2 1.6 2.0 600 500 400 300 200 = 2.5 V 100 = 4 9 SiA912DJ Vishay Siliconix ° 125 ° ° 0.0 0.5 1.0 1 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss 0 ...
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... SiA912DJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 150 ° 0.1 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.8 0 250 µA D 0.6 0.5 0.4 0.3 0.2 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.12 0.10 0. °C J 0.06 0.04 0.02 0.8 1.0 1 100 125 150 ...
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... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74953 S-80436-Rev. B, 03-Mar-08 New Product 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper SiA912DJ Vishay Siliconix 100 125 T - Case Temperature (°C) C Power Derating www.vishay.com 150 5 ...
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... SiA912DJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www ...
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PowerPAK SC70-6L PIN1 PIN6 K3 BACKSIDE VIEW OF SINGLE SINGLE PAD DIM MILLIMETERS Min Nom Max A 0.675 0.75 0. 0.05 b 0.23 0.30 0.38 C 0.15 0.20 0.25 D 1.98 2.05 2.15 D1 0.85 0.95 ...
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Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK 0.325 (0.013) 2.500 (0.098) 0.950 (0.037) 0.275 (0.011) Return to Index www.vishay.com 12 ® SC70-6L Dual 2.500 (0.098) 0.300 (0.012) 0.350 (0.014) 0.613 (0.024) 0.475 (0.019) 0.160 (0.006) 1 1.600 ...
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ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...