SIA912DJ-T1-E3 Vishay/Siliconix, SIA912DJ-T1-E3 Datasheet - Page 8

• Manufacturer Part Number: SIA912DJ-T1-E3
• Description: MOSFET 12V 4.5A 6.5W
• Manufacturer: Vishay/Siliconix

Specifications of SIA912DJ-T1-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 4.5 A
• Resistance Drain-source Rds (on): 40 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SC-70-6 Dual
• Fall Time: 15 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.9 W
• Rise Time: 15 ns
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 35 ns
• Part # Aliases: SIA912DJ-E3

Application Note 826
Vishay Siliconix
®
RECOMMENDED PAD LAYOUT FOR PowerPAK
SC70-6L Dual
2.500 (0.098)
0.300 (0.012)
0.350 (0.014)
0.325 (0.013)
2.275 (0.011)
0.613 (0.024)
2.500 (0.098)
0.950 (0.037)
0.475 (0.019)
0.160 (0.006)
0.275 (0.011)
1
0.650 (0.026)
1.600 (0.063)
Dimensions in mm/(Inches)
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Document Number: 70487
12
Revision: 21-Jan-08