SUD50N03-10P-E3 Vishay/Siliconix, SUD50N03-10P-E3 Datasheet - Page 2
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SUD50N03-10P-E3
Manufacturer Part Number
SUD50N03-10P-E3
Description
MOSFET 30V 50A 65W
Manufacturer
Vishay/Siliconix
Datasheet
1.SUD50N03-10AP-E3.pdf
(6 pages)
Specifications of SUD50N03-10P-E3
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
15 A
Resistance Drain-source Rds (on)
10 mOhms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
TO-252-3
Fall Time
12 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
83 W
Rise Time
7 ns
Tradename
TrenchFET
Typical Turn-off Delay Time
35 ns
SUD50N03-10
Siliconix
Notes
a.
b. Pulse test; pulse width
c.
2
Specifications (T
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Ratings and Characteristic (T
Pulsed Current
Diode Forward Voltage
Source-Drain Reverse Recovery Time
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054
c
c
a
Parameter
c
c
c
c
c
b
b
b
300 s, duty cycle
S-57253—Rev. E, 24-Feb-98
J
= 25 C Unless Otherwise Noted)
b
b
V
Symbol
V
r
(BR)DSS
I
t
DS(on)
t
I
I
I
C
V
GS(th)
D(on)
C
C
Q
d(on)
d(off)
I
Q
GSS
DSS
DSS
g
Q
SM
t
t
t
oss
iss
rss
SD
rr
fs
gd
gs
r
f
g
2%.
C
Siliconix was formerly a division of TEMIC Semiconductors
I
= 25 C)
V
D
V
V
V
DS
DS
GS
GS
I
V
= 30 V, V
= 15 V, V
50 A, V
F
V
= 10 V, I
V
V
V
V
Phone (408)988-8000
V
V
= 0 V, V
DS
I
V
= 50 A, di/dt = 100 A/ s
DS
DD
F
GS
DS
DS
GS
DS
GS
Test Condition
= 100 A, V
= 0 V, V
= V
= 0 V, I
= 30 V, V
= 5 V, V
= 15 V, R
= 4.5 V, I
= 15 V, I
= 10 V, I
GEN
D
GS
GS
DS
GS
=15 A, T
, I
= 10 V, R
= 0 V, T
= 25 V, F = 1 MHz
D
GS
= 10 V, I
D
GS
D
GS
= 250 A
D
D
L
= 250 A
GS
=
= 15 A
= 0.3
= 10 V
=15 A
= 15 A
= 0 V
= 0 V
J
J
20 V
= 125 C
D
G
= 125 C
= 50 A
= 2.5
FaxBack (408)970-5600
Min
1.0
30
50
20
Typ
3200
800
150
2.0
1.2
55
10
16
33
20
55
www.siliconix.com
9
8
a
Max
0.010
0.018
0.019
6000
100
100
100
1.5
50
30
20
60
40
100
1
Unit
nA
nC
pF
ns
ns
ns
V
V
A
A
V
S
A
A