SUD50N03-10P-E3 Vishay/Siliconix, SUD50N03-10P-E3 Datasheet - Page 5
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SUD50N03-10P-E3
Manufacturer Part Number
SUD50N03-10P-E3
Description
MOSFET 30V 50A 65W
Manufacturer
Vishay/Siliconix
Datasheet
1.SUD50N03-10AP-E3.pdf
(6 pages)
Specifications of SUD50N03-10P-E3
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
15 A
Resistance Drain-source Rds (on)
10 mOhms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
TO-252-3
Fall Time
12 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
83 W
Rise Time
7 ns
Tradename
TrenchFET
Typical Turn-off Delay Time
35 ns
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
www.vishay.com
Revision: 08-Apr-05
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