SUD50N03-10P-E3 Vishay/Siliconix, SUD50N03-10P-E3 Datasheet - Page 6
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SUD50N03-10P-E3
Manufacturer Part Number
SUD50N03-10P-E3
Description
MOSFET 30V 50A 65W
Manufacturer
Vishay/Siliconix
Datasheet
1.SUD50N03-10AP-E3.pdf
(6 pages)
Specifications of SUD50N03-10P-E3
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
15 A
Resistance Drain-source Rds (on)
10 mOhms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
TO-252-3
Fall Time
12 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
83 W
Rise Time
7 ns
Tradename
TrenchFET
Typical Turn-off Delay Time
35 ns
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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or in any other disclosure relating to any product.
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information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
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Document Number: 91000
www.vishay.com
Revision: 18-Jul-08
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