BUK9606-55A /T3 NXP Semiconductors, BUK9606-55A /T3 Datasheet - Page 11

• Manufacturer Part Number: BUK9606-55A /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9606-55A /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 154 A
• Resistance Drain-source Rds (on): 0.0058 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 235 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 300 W
• Rise Time: 180 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 420 ns
• Part # Aliases: BUK9606-55A,118

NXP Semiconductors
8. Revision history
Table 7.
BUK9606-55A
Product data sheet
Document ID
BUK9606-55A v.4
Modifications:
BUK9506_9606_9E06_55A-03
(9397 750 08416)
Revision history
Release date Data sheet status
20100531
20010723
•
•
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Type number BUK9606-55A separated from data sheet
BUK9506_9606_9E06_55A-03.
All information provided in this document is subject to legal disclaimers.
Product data sheet -
Product data sheet -
Rev. 04 — 31 May 2010
Change notice Supersedes
N-channel TrenchMOS logic level FET
BUK9506_9606_9E06_55A-03
-
BUK9606-55A
© NXP B.V. 2010. All rights reserved.
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