BUK9606-55A /T3 NXP Semiconductors, BUK9606-55A /T3 Datasheet - Page 6

• Manufacturer Part Number: BUK9606-55A /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9606-55A /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 154 A
• Resistance Drain-source Rds (on): 0.0058 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 235 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 300 W
• Rise Time: 180 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 420 ns
• Part # Aliases: BUK9606-55A,118

NXP Semiconductors
6. Characteristics
Table 6.
BUK9606-55A
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
C
C
C
t
t
t
t
L
L
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
D
S
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
r
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
internal source
inductance
source-drain voltage
reverse recovery time
recovered charge
Conditions
I
I
I
see
I
see
I
see
V
V
V
V
V
see
V
V
V
see
V
T
V
R
from drain lead 6 mm from package to
centre of die ; T
from upper edge of drain mounting base
to centre of die ; T
T
I
see
I
V
All information provided in this document is subject to legal disclaimers.
D
D
D
D
D
S
S
j
from source lead to source bond pad ;
j
DS
DS
DS
DS
GS
GS
GS
GS
GS
DS
GS
G(ext)
= 25 °C; see
= 25 °C
= 30 A; V
= 20 A; dI
= 0.25 mA; V
= 0.25 mA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
Figure 11
Figure 11
Figure 11
Figure
Figure
Figure 15
= 55 V; V
= 55 V; V
= 0 V; V
= 0 V; V
= 30 V; R
= 5 V; I
= 10 V; I
= 4.5 V; I
= 5 V; I
= 0 V; V
= -10 V; V
= 10 Ω; T
Rev. 04 — 31 May 2010
12; see
12; see
D
D
GS
S
DS
DS
DS
GS
GS
DS
D
/dt = -100 A/µs;
= 25 A; T
D
= 25 A; T
GS
GS
L
DS
= 25 A; T
= 0 V; T
= V
= V
= V
= 25 A; T
Figure 14
= 1.2 Ω; V
GS
GS
= 10 V; T
= -10 V; T
= 25 V; f = 1 MHz;
j
j
= 25 °C
= 0 V; T
= 0 V; T
= 25 °C
= 30 V; T
j
= 0 V; T
= 0 V; T
GS
GS
GS
= 25 °C
Figure 13
Figure 13
; T
; T
; T
j
j
j
= 25 °C;
= 175 °C;
= 25 °C;
j
j
j
j
j
j
j
j
= 25 °C;
= -55 °C;
= 175 °C;
= 25 °C
j
= 25 °C
GS
= 175 °C
= 25 °C
= 25 °C
= 25 °C
j
j
j
= 25 °C
= -55 °C
= 25 °C
= 5 V;
N-channel TrenchMOS logic level FET
BUK9606-55A
Min
55
50
1
-
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
1.5
-
-
-
0.05
2
2
-
4.8
-
5.3
6500
1000
650
45
180
420
235
4.5
2.5
7.5
0.85
80
200
© NXP B.V. 2010. All rights reserved.
1200
-
Max
-
-
2
2.3
-
500
10
100
100
13.2
5.8
6.7
6.3
8600
850
-
-
-
-
-
-
1.2
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nH
nH
nH
V
ns
nC
6 of 14