BUK9606-55A /T3 NXP Semiconductors, BUK9606-55A /T3 Datasheet - Page 7

• Manufacturer Part Number: BUK9606-55A /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9606-55A /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 154 A
• Resistance Drain-source Rds (on): 0.0058 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 235 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 300 W
• Rise Time: 180 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 420 ns
• Part # Aliases: BUK9606-55A,118

NXP Semiconductors
BUK9606-55A
Product data sheet
Fig 5.
Fig 7.
(A)
I
D
(A)
10
I
10
10
10
10
10
400
350
300
250
200
150
100
D
50
-1
-2
-3
-4
-5
-6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
7
10
2
6
5
1
min
4
typ
6
2
max
V
GS
V
All information provided in this document is subject to legal disclaimers.
GS
8
03aa36
(V) =
V DS (V)
(V)
03ne99
2.4
4
3
3
10
Rev. 04 — 31 May 2010
Fig 6.
Fig 8.
R
(mΩ)
DSon
(S)
g
fs
140
120
100
80
60
40
20
8
7
6
5
4
0
of gate-source voltage; typical values
drain current; typical values
Drain-source on-state resistance as a function
Forward transconductance as a function of
2
0
N-channel TrenchMOS logic level FET
20
4
40
BUK9606-55A
6
60
8
© NXP B.V. 2010. All rights reserved.
80
V
GS
I
D
03ne98
03ne96
(V)
(A)
100
10
7 of 14