BUK9606-55A /T3 NXP Semiconductors, BUK9606-55A /T3 Datasheet - Page 9

• Manufacturer Part Number: BUK9606-55A /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9606-55A /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 154 A
• Resistance Drain-source Rds (on): 0.0058 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 235 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 300 W
• Rise Time: 180 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 420 ns
• Part # Aliases: BUK9606-55A,118

NXP Semiconductors
BUK9606-55A
Product data sheet
Fig 13. Normalized drain-source on-state resistance
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values
1.5
0.5
a
2
1
0
-60
factor as a function of junction temperature
0
60
(A)
I
S
100
80
60
40
20
120
0
0
All information provided in this document is subject to legal disclaimers.
T
j
03ne89
( ° C)
0.2
180
Rev. 04 — 31 May 2010
T
j
= 175 °C
0.4
Fig 14. Input, output and reverse transfer capacitances
0.6
C (pF)
18000
16000 Ciss
14000
12000
10000
8000
6000
4000
2000
0
10
as a function of drain-source voltage; typical
values
0.8
−2
T
Coss
Crss
j
V
= 25 °C
SD
03ne94
(V)
N-channel TrenchMOS logic level FET
1.0
10
−1
BUK9606-55A
1
10
© NXP B.V. 2010. All rights reserved.
V
DS
03nf01
(V)
10
2
9 of 14