SI4942DY-T1 Vishay/Siliconix, SI4942DY-T1 Datasheet - Page 3

• Manufacturer Part Number: SI4942DY-T1
• Description: MOSFET 40V 7.4A 1.1W
• Manufacturer: Vishay/Siliconix

Specifications of SI4942DY-T1

• Product Category: MOSFET
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.3 A
• Resistance Drain-source Rds (on): 21 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Fall Time: 10 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.1 W
• Rise Time: 10 ns
• Factory Pack Quantity: 2500
• Typical Turn-off Delay Time: 31 ns

TYPICAL CHARACTERISTICS 25 °C unless otherwise noted
Document Number: 71887
S09-0704-Rev. D, 27-Apr-09
0.040
0.030
0.020
0.010
0.000
10
0.1
30
10
8
6
4
2
0
1
0
0.0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
V
= 5.7 A
GS
5
On-Resistance vs. Drain Current
0.2
= 20 V
5
= 4.5 V
V
SD
Q
T
g
J
I
10
D
- Source-to-Drain Voltage (V)
= 150 °C
- Total Gate Charge (nC)
0.4
- Drain Current (A)
Gate Charge
10
15
0.6
V
GS
15
= 10 V
20
0.8
T
J
20
= 25 °C
25
1.0
30
25
1.2
1600
1280
0.10
0.08
0.06
0.04
0.02
0.00
960
640
320
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
- 25
D
GS
= 7.4 A
= 10 V
2
8
C
T
V
0
J
V
rss
DS
GS
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
25
Capacitance
4
16
I
D
= 7.4 A
50
C
Vishay Siliconix
C
oss
iss
24
6
75
Si4942DY
www.vishay.com
100
32
8
125
150
10
40
3