SI4942DY-T1 Vishay/Siliconix, SI4942DY-T1 Datasheet - Page 4

• Manufacturer Part Number: SI4942DY-T1
• Description: MOSFET 40V 7.4A 1.1W
• Manufacturer: Vishay/Siliconix

Specifications of SI4942DY-T1

• Product Category: MOSFET
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.3 A
• Resistance Drain-source Rds (on): 21 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Fall Time: 10 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.1 W
• Rise Time: 10 ns
• Factory Pack Quantity: 2500
• Typical Turn-off Delay Time: 31 ns

Si4942DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
0.6
0.4
0.2
0.0
0.01
- 50
0.1
2
1
10
-4
- 25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
Threshold Voltage
T
J
- Temperature (°C)
25
10
-3
50
I
D
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 µA
75
Limited by R
0.01
100
100
0.1
10
10
1
0.1
-2
DS(on)
* V
125
DS
Single Pulse
T
*
> minimum V
A
150
Square Wave Pulse Duration (s)
= 25 °C
V
DS
Safe Operating Area
- Drain-to-Source Voltage (V)
10
1
-1
GS
at which R
DS(on)
10
50
40
30
20
10
1
0.001
0
is specified
1 ms
10 ms
0.01
100 ms
1 s
10 s
DC
100
10
Single Pulse Power
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
0.1
DM
JM
- T
Time (s)
t
A
1
S09-0704-Rev. D, 27-Apr-09
= P
t
2
1
Document Number: 71887
DM
Z
thJA
thJA
100
t
t
1
2
10
(t)
= 90 °C/W
100
600
600