SI4933DY-T1 Vishay/Siliconix, SI4933DY-T1 Datasheet - Page 4

• Manufacturer Part Number: SI4933DY-T1
• Description: MOSFET 12V 9.8A 1.1W
• Manufacturer: Vishay/Siliconix

Specifications of SI4933DY-T1

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 7.4 A
• Resistance Drain-source Rds (on): 14 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Fall Time: 47 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.1 W
• Rise Time: 47 ns
• Factory Pack Quantity: 2500
• Typical Turn-off Delay Time: 320 ns

Si4933DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.1
- 0.2
0.4
0.3
0.2
0.1
0.0
0.01
0.1
- 50
2
1
10
-4
- 25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
Threshold Voltage
T
J
25
- Temperature (°C)
10
-3
50
I
D
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 500 µA
75
0.01
100
0.1
10
10
100
1
0.1
-2
Limited by R
Safe Operating Area, Junction-to-Ambient
Limited
* V
I
125
D(on)
DS
Single Pulse
T
> minimum V
A
= 25 °C
V
150
Square Wave Pulse Duration (s)
DS
DS(on)
- Drain-to-Source Voltage (V)
BVDSS Limited
10
1
-1
*
GS
at which R
DS(on)
10
1
I
50
40
30
20
10
DM
0
is specified
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
10
Limited
-2
10
100
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
Single Pulse Power
P
DM
JM
- T
1
t
A
1
Time (s)
S09-0867-Rev. D, 18-May-09
= P
t
2
DM
Document Number: 71980
Z
thJA
thJA
100
10
t
t
1
2
(t)
= 85 °C/W
100
600
600