SI4933DY-T1 Vishay/Siliconix, SI4933DY-T1 Datasheet - Page 6

• Manufacturer Part Number: SI4933DY-T1
• Description: MOSFET 12V 9.8A 1.1W
• Manufacturer: Vishay/Siliconix

Specifications of SI4933DY-T1

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 7.4 A
• Resistance Drain-source Rds (on): 14 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Fall Time: 47 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.1 W
• Rise Time: 47 ns
• Factory Pack Quantity: 2500
• Typical Turn-off Delay Time: 320 ns

Document Number: 71192
11-Sep-06
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
e
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
D
DIM
A
A
B
C
D
E
H
S
e
h
L
q
1
B
A
1
A
1.35
0.10
0.35
0.19
4.80
3.80
5.80
0.25
0.50
0.44
Min
0°
MILLIMETERS
0.25 mm (Gage Plane)
1.27 BSC
8
1
7
2
Max
1.75
0.20
0.51
0.25
5.00
4.00
6.20
0.50
0.93
0.64
8°
6
3
L
5
4
E
S
h x 45
0.0075
0.053
0.004
0.014
0.189
0.150
0.228
0.010
0.020
0.018
Min
H
0°
0.050 BSC
INCHES
Package Information
C
0.069
0.008
0.020
0.010
0.196
0.157
0.244
0.020
0.037
0.026
Max
8°
q
Vishay Siliconix
All Leads
0.101 mm
0.004"
www.vishay.com
1