SUD50N02-06 Vishay/Siliconix, SUD50N02-06 Datasheet - Page 2

• Manufacturer Part Number: SUD50N02-06
• Description: MOSFET 20V 30A 100W
• Manufacturer: Vishay/Siliconix

Specifications of SUD50N02-06

• Product Category: MOSFET
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 30 A
• Resistance Drain-source Rds (on): 6 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252-3
• Fall Time: 100 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 8.3 W
• Rise Time: 120 ns
• Factory Pack Quantity: 2000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 80 ns

SUD50N02-06
Vishay Siliconix
Notes
a.
b.
c.
www.vishay.com S FaxBack 408-970-5600
2
SPECIFICATIONS (T
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Ratings and Characteristic (T
Pulsed Current
Diode Forward Voltage
Source-Drain Reverse Recovery Time
Guaranteed by design, not subject to production testing.
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Independent of operating temperature.
c
c
a
Parameter
c
c
c
c
c
b
b
b
b
J
= 25_C UNLESS OTHERWISE NOTED)
Symbol
V
V
r
(BR)DSS
I
DS(on)
DS(on)
t
t
I
C
GS(th)
I
I
C
V
D(on)
C
Q
Q
d(off)
GSS
d(on)
I
DSS
DSS
g
Q
R
SM
t
oss
t
t
SD
iss
rss
rr
fs
gs
gd
r
f
g
g
C
V
I
D
V
V
V
= 25_C)
GS
DS
DS
DS
^ 50 A, V
GS
= 0 V, V
I
= 20 V, V
= 10 V, V
V
= 4.5 V, I
F
V
V
V
V
V
V
V
V
DS
I
= 50 A, di/dt = 100 A/ms
DS
F
Test Condition
GS
DS
V
DD
DD
DS
GS
GS
DS
= 100 A, V
= 0 V, V
= V
= 5 V, V
= 10 V, R
= 10 V, R
= 0 V, I
= 20 V, V
,
= 4.5 V, I
= 2.5 V, I
DS
GEN
= 5 V, I
GS
GS
D
GS
GS
= 20 V, f = 1 MHz
=30 A, T
, I
= 4.5 V, R
= 0 V, T
GS
= 4.5 V, I
D
D
GS
D
GS
= 250 mA
L
L
GS
D
D
= 250 mA
= "12 V
= 30 A
= 0.2 W
= 0.2 W
= 4.5 V
= 30 A
= 20 A
= 0 V
= 0 V
J
,
J
= 125_C
= 125_C
D
D
G
= 50 A
= 2.5 W
Min
0.6
20
50
20
1
Typ
6600
1150
600
120
100
1.2
65
13
14
25
80
45
S-31724—Rev. C, 18-Aug-03
a
Document Number: 71136
"100
Max
0.006
0.009
0.009
130
180
120
150
100
100
3.1
1.5
50
40
1
Unit
nC
nA
mA
mA
pF
ns
ns
ns
W
W
V
V
A
S
A
V