SUD50N02-06 Vishay/Siliconix, SUD50N02-06 Datasheet - Page 4

• Manufacturer Part Number: SUD50N02-06
• Description: MOSFET 20V 30A 100W
• Manufacturer: Vishay/Siliconix

Specifications of SUD50N02-06

• Product Category: MOSFET
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 30 A
• Resistance Drain-source Rds (on): 6 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252-3
• Fall Time: 100 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 8.3 W
• Rise Time: 120 ns
• Factory Pack Quantity: 2000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 80 ns

SUD50N02-06
Vishay Siliconix
www.vishay.com S FaxBack 408-970-5600
4
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
THERMAL RATINGS
0.01
2.0
1.6
1.2
0.8
0.4
0.0
0.1
40
32
24
16
8
0
2
1
10
- 50
0
-4
On-Resistance vs. Junction Temperature
V
I
- 25
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
D
GS
Maximum Avalanche Drain Current
25
= 30 A
Single Pulse
= 4.5 V
T
0
vs. Ambient Temperature
J
T
50
A
- Junction Temperature (_C)
- Case Temperature (_C)
25
10
-3
75
50
75
100
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
125
10
125
-2
150
150
Square Wave Pulse Duration (sec)
175
175
10
-1
1000
0.01
100
1
100
0.1
10
10
1
1
0.1
0
by r
Limited
Source-Drain Diode Forward Voltage
DS(on)
V
T
0.3
V
DS
J
SD
= 150_C
Single Pulse
Safe Operating Area
T
- Drain-to-Source Voltage (V)
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
- Source-to-Drain Voltage (V)
A
Notes:
P
1
= 25_C
DM
JM
- T
0.6
A
t
1
= P
t
2
DM
S-31724—Rev. C, 18-Aug-03
Z
thJA
0.9
thJA
Document Number: 71136
100
10
t
t
(t)
1
2
T
= 40_C/W
J
= 25_C
1.2
10 ms
100 ms
1 ms
10 ms
100 ms
1 s
10 s
100 s
dc
600
100
1.5