IRFP450-EPBF Vishay/Siliconix, IRFP450-EPBF Datasheet - Page 5

• Manufacturer Part Number: IRFP450-EPBF
• Description: MOSFET N-Chan 500V 14 Amp
• Manufacturer: Vishay/Siliconix

Specifications of IRFP450-EPBF

• Product Category: MOSFET
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 14 A
• Resistance Drain-source Rds (on): 0.4 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-247AC
• Fall Time: 44 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 190 W
• Rise Time: 47 ns
• Factory Pack Quantity: 500
• Typical Turn-off Delay Time: 92 ns

Document Number: 91233
S-81271-Rev. A, 16-Jun-08
Fig. 9 - Maximum Drain Current vs. Case Temperature
Vary t
required I
p
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
AS
R
10 V
G
V
DS
t
p
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
I
AS
D.U.T
0.01 Ω
L
+
-
V
DD
A
Fig. 12b - Unclamped Inductive Waveforms
V
I
90 %
10 %
AS
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
DS
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
V
GS
t
d(on)
V
IRFP450, SiHFP450
DS
t
r
t
p
D.U.T.
Vishay Siliconix
R
D
t
d(off)
V
DS
t
f
V
+
-
www.vishay.com
DD
V
DD
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