IRFP450-EPBF Vishay/Siliconix, IRFP450-EPBF Datasheet - Page 6

• Manufacturer Part Number: IRFP450-EPBF
• Description: MOSFET N-Chan 500V 14 Amp
• Manufacturer: Vishay/Siliconix

Specifications of IRFP450-EPBF

• Product Category: MOSFET
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 14 A
• Resistance Drain-source Rds (on): 0.4 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-247AC
• Fall Time: 44 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 190 W
• Rise Time: 47 ns
• Factory Pack Quantity: 500
• Typical Turn-off Delay Time: 92 ns

IRFP450, SiHFP450
Vishay Siliconix
www.vishay.com
6
10 V
Fig. 13a - Basic Gate Charge Waveform
V
G
Q
GS
Charge
Q
Q
GD
G
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
12 V
V
Fig. 13b - Gate Charge Test Circuit
GS
Same type as D.U.T.
Current regulator
0.2 µF
Current sampling resistors
3 mA
50 kΩ
0.3 µF
I
G
S-81271-Rev. A, 16-Jun-08
Document Number: 91233
D.U.T.
I
D
+
-
V
DS