SI6954ADQ-T1 Vishay/Siliconix, SI6954ADQ-T1 Datasheet

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SI6954ADQ-T1

Manufacturer Part Number
SI6954ADQ-T1
Description
MOSFET 30V 3.4A 1W
Manufacturer
Vishay/Siliconix
Datasheet

Specifications of SI6954ADQ-T1

Product Category
MOSFET
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3.1 A
Resistance Drain-source Rds (on)
53 mOhms
Configuration
Dual
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
TSSOP-8
Fall Time
10 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
830 mW
Rise Time
10 ns
Factory Pack Quantity
3000
Tradename
TrenchFET
Typical Turn-off Delay Time
23 ns

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI6954ADQ-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
26 885
Part Number:
SI6954ADQ-T1-E3
Manufacturer:
VISHAY
Quantity:
25 582
Part Number:
SI6954ADQ-T1-E3
Manufacturer:
VISHAY
Quantity:
12 857
Company:
Part Number:
SI6954ADQ-T1-E3
Quantity:
70 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 71130
S-81221-Rev. C, 02-Jun-08
Ordering Information: Si6954ADQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
DS
30
(V)
G
D
S
S
1
1
1
1
1
2
3
4
0.075 at V
0.053 at V
R
DS(on)
J
a
TSSOP-8
N-Channel 2.5-V (G-S) Battery Switch
Top View
= 150 °C)
a
GS
GS
(Ω)
= 4.5 V
= 10 V
a
8
7
6
5
a
D
S
S
G
2
2
2
2
A
I
= 25 °C, unless otherwise noted
D
3.4
2.9
Steady State
Steady State
(A)
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
• Halogen-free
Symbol
Symbol
T
R
R
TrenchFET
J
V
V
I
P
, T
DM
I
I
thJA
thJF
GS
DS
D
S
D
G
stg
1
N-Channel MOSFET
®
Power MOSFETs: 2.5 V Rated
D
S
Typical
1
1
10 s
0.83
0.96
126
3.4
2.7
1.0
90
65
- 55 to 150
± 20
30
20
Steady State
G
Maximum
2
0.69
0.83
0.53
125
150
3.1
2.5
80
N-Channel MOSFET
Vishay Siliconix
Si6954ADQ
D
S
2
2
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
RoHS
COMPLIANT
1

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SI6954ADQ-T1 Summary of contents

Page 1

... Top View Ordering Information: Si6954ADQ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction) a Maximum Power Dissipation ...

Page 2

... Si6954ADQ Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 71130 S-81221-Rev. C, 02-Jun- 4 °C J 0.8 1.0 1.2 1.4 Si6954ADQ Vishay Siliconix 600 500 C iss 400 300 200 C oss 100 C rss Drain-to-Source Voltage (V) DS Capacitance 1 ...

Page 4

... Si6954ADQ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 0 0.0 - 0.2 - 0.4 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 5

JEDEC Part Number: MO-153 R 0. Corners 0.10 (4 Corners) Document Number: 71201 06-Jul- oK1 ECN: S-03946—Rev. G, 09-Jul-01 L1 DWG: 5844 Package Information Vishay Siliconix Dim Min Nom Max A – – ...

Page 6

... Wharton McDaniel and David Oldham When Vishay Siliconix introduced its LITTLE FOOT MOSFETs, it was the first time that power MOSFETs had been offered in a true surface-mount package, the SOIC. LITTLE FOOT immediately found a home in new small form factor disk drives, computers, and cellular phones. ...

Page 7

... CONCLUSION TSSOP power MOSFETs provide a significant reduction in PC board footprint and package height, allowing reduction in board size and application where SOICs will not fit. This is accomplished using a standard IC package and a custom thermal resistance leadframe, combining small size with good power handling capability ...

Page 8

... Mounting LITTLE FOOT Wharton McDaniel Surface-mounted LITTLE FOOT power MOSFETs use integrated circuit and small-signal packages which have been been modified to provide the heat transfer capabilities required by power devices. Leadframe materials and design, molding compounds, and die attach materials have been changed, while the footprint of the packages remains the same ...

Page 9

RECOMMENDED MINIMUM PADS FOR TSSOP-8 Return to Index Return to Index Document Number: 72611 Revision: 21-Jan-08 0.092 (2.337) 0.026 (0.660) 0.014 0.012 (0.356) (0.305) Recommended Minimum Pads Dimensions in Inches/(mm) Application Note 826 Vishay Siliconix www.vishay.com 27 ...

Page 10

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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