SI6954ADQ-T1 Vishay/Siliconix, SI6954ADQ-T1 Datasheet - Page 3
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SI6954ADQ-T1
Manufacturer Part Number
SI6954ADQ-T1
Description
MOSFET 30V 3.4A 1W
Manufacturer
Vishay/Siliconix
Datasheet
1.SI6954ADQ-T1.pdf
(10 pages)
Specifications of SI6954ADQ-T1
Product Category
MOSFET
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3.1 A
Resistance Drain-source Rds (on)
53 mOhms
Configuration
Dual
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
TSSOP-8
Fall Time
10 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
830 mW
Rise Time
10 ns
Factory Pack Quantity
3000
Tradename
TrenchFET
Typical Turn-off Delay Time
23 ns
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI6954ADQ-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
26 885
Company:
Part Number:
SI6954ADQ-T1-E3
Manufacturer:
VISHAY
Quantity:
25 582
Company:
Part Number:
SI6954ADQ-T1-E3
Manufacturer:
VISHAY
Quantity:
12 857
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71130
S-81221-Rev. C, 02-Jun-08
0.15
0.12
0.09
0.06
0.03
0.00
20
10
10
1
8
6
4
2
0
0.0
0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
0.2
= 3.4 A
On-Resistance vs. Drain Current
= 10 V
V
4
SD
2
0.4
Q
- Source-to-Drain Voltage (V)
g
- Total Gate Charge (nC)
I
D
Gate Charge
- Drain Current (A)
T
0.6
8
J
= 150 °C
4
0.8
V
GS
12
= 4.5 V
1.0
T
J
V
6
= 25 °C
GS
16
1.2
= 10 V
1.4
20
8
0.15
0.12
0.09
0.06
0.03
0.00
600
500
400
300
200
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
V
I
rss
- 25
D
GS
= 3.4 A
= 10 V
2
6
V
V
GS
0
T
DS
J
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
Capacitance
25
4
12
I
D
C
50
= 3.4 A
Vishay Siliconix
oss
Si6954ADQ
6
18
75
C
iss
www.vishay.com
100
8
24
125
150
10
30
3