PBSS4230PAN,115 NXP Semiconductors, PBSS4230PAN,115 Datasheet - Page 5

• Manufacturer Part Number: PBSS4230PAN,115
• Description: Transistors Bipolar - BJT 30V 2A NPN/PNP lo VCEsat transistor
• Manufacturer: NXP Semiconductors

Specifications of PBSS4230PAN,115

• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 30 V
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 7 V
• Collector-emitter Saturation Voltage: 60 mV
• Maximum Dc Collector Current: 3 A
• Gain Bandwidth Product Ft: 120 MHz
• Dc Collector/base Gain Hfe Min: 250
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: DFN2020-6
• Continuous Collector Current: 2 A
• Dc Current Gain Hfe Max: 380
• Maximum Power Dissipation: 1450 mW
• Minimum Operating Temperature: - 55 C

NXP Semiconductors
PBSS4230PAN
Product data sheet
Symbol
Fig. 2.
Per device
R
th(j-a)
Z
(K/W)
th(j-a)
10
10
10
1
3
2
10
FR4 PCB 35 µm, standard footprint
Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
-5
duty cycle = 1
0.75
0.33
0.1
0.02
0
Parameter
thermal resistance
from junction to
ambient
0.05
0.01
0.5
0.2
10
-4
[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
Device mounted on an FR4 PCB, single-sided 35 µm copper strip line, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided 35 µm copper strip line, tin-plated, mounting pad for
collector 1 cm
Device mounted on 4-layer PCB 35 µm copper strip line, tin-plated and standard footprint.
Device mounted on 4-layer PCB 35 µm copper strip line, tin-plated, mounting pad for collector 1 cm
Device mounted on an FR4 PCB, single-sided 70 µm copper strip line, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided 70 µm copper strip line, tin-plated, mounting pad for
collector 1 cm
Device mounted on 4-layer PCB 70 µm copper strip line, tin-plated and standard footprint.
Device mounted on 4-layer PCB 70 µm copper strip line, tin-plated, mounting pad for collector 1 cm
10
-3
Conditions
2
2
All information provided in this document is subject to legal disclaimers.
.
.
in free air
10
-2
14 December 2012
10
-1
30 V, 2 A NPN/NPN low VCEsat (BISS) transistor
1
[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
10
Min
-
-
-
-
-
-
-
-
PBSS4230PAN
10
Typ
-
-
-
-
-
-
-
-
2
© NXP B.V. 2012. All rights reserved
t
p
006aad166
(s)
Max
245
160
171
130
202
120
130
63
10
3
Unit
K/W
K/W
K/W
K/W
K/W
K/W
K/W
K/W
2
2
.
.
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