IS61LV12816L-10TLI ISSI, Integrated Silicon Solution Inc, IS61LV12816L-10TLI Datasheet - Page 3

• Manufacturer Part Number: IS61LV12816L-10TLI
• Description: IC SRAM 2MBIT 10NS 44TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61LV12816L-10TLI

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 2M (128K x 16)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 44-TSOP II
• Density: 2Mb
• Access Time (max): 10ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 3.3V
• Address Bus: 17b
• Package Type: TSOP-II
• Operating Temp Range: -40C to 85C
• Number Of Ports: 1
• Supply Current: 65mA
• Operating Supply Voltage (min): 3.135V
• Operating Supply Voltage (max): 3.6V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 44
• Word Size: 16b
• Number Of Words: 128K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS61LV12816L
PIN DESCRIPTIONS
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. F
10/27/05
PIN CONFIGURATION
48-Pin mini BGA (B)
A0-A16
I/O0-I/O15
CE
OE
WE
LB
UB
NC
V
GND
DD
A
B
C
D
E
F
G
H
GND
I/O
I/O
V
I/O
I/O
NC
LB
1
DD
14
15
8
9
Address Inputs
Data Inputs/Outputs
Chip Enable Input
Output Enable Input
Write Enable Input
Lower-byte Control (I/O0-I/O7)
Upper-byte Control (I/O8-I/O15)
No Connection
Power
Ground
I/O
I/O
I/O
I/O
OE
NC
UB
A8
2
12
11
13
10
A14
A12
A0
NC
NC
A5
3
A3
A9
A15
A16
A13
A10
A1
A6
A7
A4
4
I/O
I/O
I/O
I/O
A11
WE
CE
5
A2
1
3
4
5
GND
I/O
I/O
V
I/O
I/O
NC
NC
6
DD
0
2
6
7
1-800-379-4774
44-Pin LQFP (LQ)
GND
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
V
CE
DD
1
2
3
4
5
6
7
8
9
10
11
44 43 42 41 40 39 38 37 36 35 345
12 13 14 15 16 17 18 19 20 21 22
TOP VIEW
ISSI
33
32
31
30
29
28
27
26
25
24
23
I/O15
I/O14
I/O13
I/O12
GND
V
I/O11
I/O10
I/O9
I/O8
NC
DD
®
3