IS61LV12816L-10TLI ISSI, Integrated Silicon Solution Inc, IS61LV12816L-10TLI Datasheet - Page 4

• Manufacturer Part Number: IS61LV12816L-10TLI
• Description: IC SRAM 2MBIT 10NS 44TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61LV12816L-10TLI

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 2M (128K x 16)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 44-TSOP II
• Density: 2Mb
• Access Time (max): 10ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 3.3V
• Address Bus: 17b
• Package Type: TSOP-II
• Operating Temp Range: -40C to 85C
• Number Of Ports: 1
• Supply Current: 65mA
• Operating Supply Voltage (min): 3.135V
• Operating Supply Voltage (max): 3.6V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 44
• Word Size: 16b
• Number Of Words: 128K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS61LV12816L
OPERATING RANGE
4
ABSOLUTE MAXIMUM RATINGS
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at these or any other conditions above those indicated in the opera-
tional sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
DC ELECTRICAL CHARACTERISTICS
Note:
1.
Range
Commercial
Industrial
Symbol
V
V
T
P
Symbol
V
V
V
V
I
I
LO
LI
STG
DD
TERM
T
OH
OL
IH
IL
V
V
IL
IH
(min.) = –0.3V DC; V
(max.) = V
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
Ambient Temperature
Parameter
Power Supply Voltage Relative to GND
Terminal Voltage with Respect to GND
Storage Temperature
Power Dissipation
DD
–40°C to +85°C
0°C to +70°C
+ 0.3V DC; V
IL
(min.) = –2.0V AC (pulse width - 2.0 ns). Not 100% tested.
(1)
(1)
IH
(max.) = V
(1)
3.3V + 10%, -5%
3.3V + 10%, -5%
Test Conditions
V
V
GND
GND
DD
DD
DD
V
+ 2.0V AC (pulse width - 2.0 ns). Not 100% tested.
DD
Integrated Silicon Solution, Inc. — www.issi.com —
= Min., I
= Min., I
(Over Operating Range)
(8 n
V
V
OUT
IN
S
)
OH
OL
V
= 8.0 mA
= –4.0 mA
DD
V
DD
, Outputs Disabled
–0.5 to V
–65 to + 150
–0.5 to 4.0V
3.3V + 10%
3.3V + 10%
V
DD
Value
1.0
(10 n
DD
+ 0.5
S
)
Min.
–0.3
2.4
—
–1
–1
2
Unit
°C
W
V
V
V
DD
Max.
0.4
0.8
ISSI
—
1
1
+ 0.3
1-800-379-4774
10/27/05
Unit
µA
µA
Rev. F
V
V
V
V
®