SMBT3906DW1T1G ON Semiconductor, SMBT3906DW1T1G Datasheet

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SMBT3906DW1T1G

Manufacturer Part Number
SMBT3906DW1T1G
Description
Transistors Bipolar - BJT SS GP XSTR PNP 40V
Manufacturer
ON Semiconductor
Datasheet

Specifications of SMBT3906DW1T1G

Rohs
yes
Configuration
Dual
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
- 40 V
Collector- Emitter Voltage Vceo Max
- 40 V
Emitter- Base Voltage Vebo
- 5 V
Collector-emitter Saturation Voltage
- 0.25 V
Gain Bandwidth Product Ft
250 MHz
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-363
Continuous Collector Current
- 200 mA
Dc Current Gain Hfe Max
300
Maximum Power Dissipation
150 mW
Minimum Operating Temperature
- 55 C
MBT3906DW1T1G,
SMBT3906DW1T1G
Dual General Purpose
Transistor
SOT−23/SOT−323 three−leaded device. It is designed for general
purpose amplifier applications and is housed in the SOT−363
six−leaded surface mount package. By putting two discrete devices in
one package, this device is ideal for low−power surface mount
applications where board space is at a premium.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
*For additional information on our Pb−Free strategy and soldering details, please
 Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 4
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Electrostatic Discharge
Total Package Dissipation (Note 1)
Thermal Resistance,
Junction and Storage
The MBT3906DW1T1G device is a spin−off of our popular
Site and Control Change Requirements
Compliant*
h
Low V
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7−inch/3,000 Unit Tape and Reel
AEC−Q101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
recommended footprint.
FE
T
Junction−to−Ambient
Temperature Range
A
, 100−300
= 25C
CE(sat)
Characteristic
Rating
,  0.4 V
Symbol
Symbol
T
V
V
V
ESD
R
J
P
, T
CEO
CBO
EBO
I
qJA
C
D
stg
−55 to +150
Value
−200
−5.0
Max
−40
−40
150
833
HBM Class 2
MM Class B
1
mAdc
C/W
Unit
Unit
Vdc
Vdc
Vdc
mW
C
†For information on tape and reel specifications,
MBT3906DW1T1G
SMBT3906DW1T1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
(Note: Microdot may be in either location)
Device
Q
ORDERING INFORMATION
(4)
(3)
1
MARKING DIAGRAM
A2 = Device Code
M = Date Code
G = Pb−Free Package
http://onsemi.com
SOT−363/SC−88
6
1
CASE 419B
STYLE 1
A2 M G
(5)
(Pb−Free)
(Pb−Free)
SOT−363
SOT−363
Package
Publication Order Number:
G
(2)
MBT3906DW1T1/D
Tape & Reel
Tape & Reel
Shipping
(1)
(6)
Q
3,000 /
3,000 /
2

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SMBT3906DW1T1G Summary of contents

Page 1

... Device Package Shipping MBT3906DW1T1G SOT−363 3,000 / (Pb−Free) Tape & Reel SMBT3906DW1T1G SOT−363 3,000 / (Pb−Free) Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 2) Collector −Base Breakdown Voltage Emitter −Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current ON CHARACTERISTICS (Note 2) DC Current Gain (I = −0.1 mAdc −1.0 Vdc) ...

Page 3

10.6 V 300 ns DUTY CYCLE = 2% Figure 1. Delay and Rise Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS 10 7.0 5.0 C obo C ibo 3.0 2.0 1.0 0.1 0.2 0.3 ...

Page 4

TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS (V CE 5.0 SOURCE RESISTANCE = 200 1 4.0 SOURCE RESISTANCE = 200 0 3.0 SOURCE RESISTANCE = 2 2.0 ...

Page 5

TYPICAL STATIC CHARACTERISTICS 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 1 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 1 25 ...

Page 6

... A1 0.40 0.0157 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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